Last chance to register: 1250-Volt GaN Switcher ICs Extend GaN Application

Join us tomorrow to explore benefits of WBG devices and how to achieve higher voltage GaN devices.

View this email online Education for the Creators of Technology 1250-Volt GaN Switcher ICs Extend GaN Application Event Date: Wednesday, May 1, 2024 Start Time: 9:00am PDT | 12:00pm EDT | 18:00 CEST Sponsored by: Power Integrations Register Now Compared to more traditional semiconductor technologies, GaN transistors begin to approach the "ideal switch" – an enviably low specific RDSON and extremely low gate and source-drain capacitance. The technology doesn't require rare materials, and its processing energy budget is far lower than that of (Silicon Carbide) SiC, its closest (wide-bandgap) WGB competitor. GaN has reached the voltage and current carrying capacity of SiC when discussing the universal mains voltage level. Can GaN replace SiC in higher voltage applications too? Don't miss this opportunity to learn about the pros and cons of GaN at voltage levels above that needed for residential mains powered equipment. This presentation discusses the design benefits of WBG devices, when to use GaN switches and when to use silicon, and compares GaN and silicon carbide power-switch efficiency. Explore the path to higher voltage GaN devices and delve into some informative and intriguing experimental data. Register Now Scheduling Conflict? No problem... Register here and we'll send you a link to watch the presentation on demand. TechOnline is part of the AspenCore Network. Forward this email to a friend or colleague To opt out of future TechOnline webinar invitation emails: Unsubscribe TechOnline, 29151 E. Panorama Circle, Centennial, CO 80112 USA Privacy Policy | Terms of Use